FF200R17KE3S4HOSA1
manufacturer:
Infineon Technologies
Description:
IGBT MODULE VCES 1200V 200A
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
310 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Tray
Series:
C
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.45V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max):
1700 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 125°C (TJ)
Current - Collector Cutoff (Max):
3 MA
IGBT Type:
Trench Field Stop
Power - Max:
1250 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
18 NF @ 25 V
Configuration:
Half Bridge Inverter
NTC Thermistor:
No
Base Product Number:
FF200R17
Introduction
IGBT Module Trench Field Stop Half Bridge Inverter 1700 V 310 A 1250 W Chassis Mount Module
Send RFQ
Stock:
MOQ: